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(Invited) Aspect Ratio Trapping: A Unique Technology for Integrating Ge and III-Vs with Silicon CMOS
(Invited) Aspect Ratio Trapping: A Unique Technology for Integrating Ge and III-Vs with Silicon CMOS
2010
James Fiorenza
Ji-Soo Park
Jennifer Hydrick
Jason Li
Jizhong Li
Mike Curtin
M. Carroll
Anthony J. Lochtefeld
Keywords:
CMOS
Nanotechnology
Materials science
Silicon
Electronic engineering
Trapping
Correction
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