Surface potential of diamond and diamond-like carbon thin films on Si substrate.

Semiconductor lms are increasingly applied for cathodes of autoelectronic emission. In the case of autoelectronic emission the cathode heats itself, therefore the wide band gap semiconductors, such as diamond lms, are more suitable for cathodes. Moreover, considering high thermal conduction of diamond lms, it is easy to optimize the process of autoelectronic emission. Primary experimental results regarding the investigation of the surface electric potential of diamond thin lms and diamondlike carbon (DLC) thin lms are presented in the paper. The lms, intended for autoelectronic emission cathodes, were deposited on differently processed silicon substrate. Values of electron work function, as well as unambiguously related to it surface electric potential distribution, were examined by contactless KelvinnZisman method.