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Increasing efficiency of GaN HEMT transistors in equipment for radiometry using numerical simulation
Increasing efficiency of GaN HEMT transistors in equipment for radiometry using numerical simulation
2019
V. G. Tikhomirov
A. G. Gudkov
S. V. Agasieva
D D Dynaiev
M K Popov
S. V. Chizhikov
Keywords:
Radiometry
Computer simulation
Optoelectronics
Transistor
High-electron-mobility transistor
Materials science
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