A process for producing a semiconductor structure and corresponding semiconductor structure

The invention provides a method for producing a semiconductor structure comprising the steps of: providing a crystalline semiconductor substrate (1); Providing a porous region (10) adjacent a surface (OF) of the semiconductor substrate (1); Introducing a dopant (12) into the porous region (10) from the surface (OF) and thermal recrystallization of the porous region (10) in a crystalline impurity region (10 ') of the semiconductor substrate (1), the doping type and / or doping concentration deviates and / or doping distribution from that or those of the semiconductor substrate (1). The invention also provides a corresponding semiconductor structure.