Direct determination of interface and bulk traps in stacked HfO/sub 2/ dielectrics using charge pumping method

For the first time, trap density at SiO/sub 2//Si interface, HfO/sub 2//SiO/sub 2/ interface, and HfO/sub 2/ bulk of stacked HfO/sub 2//SiO/sub 2/ dielectrics are quantified respectively with a simple charge pumping method. It was found that the amount of each individual type of traps can be well correlated to specific process conditions as well as device performance, which makes such innovative characterization method very powerful for process optimization of high-k dielectrics.