HgCdTe Charge-Coupled Detectors (CCD)

CCD shift registers have been investigated in 4.4 pm HgCdTe for time delay and integrate (TDI) enhancement of responsivity and signal to noise ratio and for multiplexing a number of TDI shift registers. CCD linear arrays and area arrays have been operated from 77K to 140K cooling and from 50 kHz to above 1 MHz. Charge transfer efficiency (CTE) has been measured to 0.9999 on a 32 stage four phase p channel device. Infrared sensitivity measure-ments show, D* values above 10 12 cmHz 1/2 /W for full TDI enhancement of32. TDI has been demonstrated utilizing focused laser illumination scanned synchronously with the clocked charge. Sensitivity and noise analyses have been made to show limits of detection for multiplexed arrays.