Property improvement of srbi2ta2o9 thin films prepared at 600°c by pulse-mocvd

Abstract : SrBi2TaO9(SBT) films were directly crystallized at 600 °C on (111)Pt/Ti/SiO2/Si substrates by MOCVD. The degree of (103) orientation of the film increased by the source gas pulse introduction technique (pulsed-MOCVD) compared by the conventional continuous gas introduction technique(continuous-MOCVD). The remanent polarization(Pr) value of the film was 60% increase from 3.5 to 5.4 μC/cm2 and the leakage current density was drastically improved to be about 10−5 A/cm2 up to 220 kV/cm. This result shows the advantage of pulsed-MOCVD technique for SBT film preparation at low temperature.