The evolution of point defects in semiconductors studied using the decay of implanted radioactive isotopes

Abstract Beams of radioactive ions implanted in semiconductors provide a unique means of establishing the chemical identity of point defects and of exploring the evolution of defects through several chemical species. We report results obtained for samples of Si implanted with either 193 Hg or 197 Hg . The defects produced were studied using photoluminescence (PL). In addition to the defects involving only Hg or its daughters, more complex defects containing Li were also created and studied as the radioactive heavy element constituents decayed. We have identified a new defect containing one Hg atom and another involving Li and two Au atoms.