Microwave dielectric properties of SiC(B) solid solution powder prepared by sol–gel

Abstract B-doped SiC powders were synthesized at different temperatures by sol–gel. Results show that C-enriched β-SiC is generated completely when the temperature is 1700 °C and SiC(B) solid solution is generated when the temperature is 1800 °C. The electric permittivities of SiC samples were determined in the frequency range of 8.2–12.4 GHz. Results show that the SiC(B) sample has higher values in real part ɛ ′ and imaginary part ɛ ″ of permittivity. The mechanism of dielectric loss by doping has been discussed.