Defects in undoped and Mg-doped GaN and AlxGa1-xN

Abstract We report on a quantitative identification of the shallow oxygen donor in GaN, compare the defects which are detected by optically detected magnetic resonance in the yellow and red emission bands in nominally undoped GaN, and demonstrate that independent of the doping level the microscopic structure of the Mg acceptor remains the same. There is a minor influence on the magnetic resonance parameters of Mg, which comes from a modification of the strain and changes by Mg incorporation. With increasing Al content in the Al x Ga 1− x N alloy the g -values become isotropic. The compensating centers are most likely vacancy-type complexes.