Deep level transient spectroscopy study in n‐type InP

This paper reports the results of a Deep Level Transient Spectroscopy (DLTS) study on 14 InP diodes fabricated from five different crystals. From 16 observed DLTS peaks and corresponding Arrhenius plots, seven (or eight) trapping levels have been identified whose characteristics are as follows: Trapping levels Characteristics E1 = 210 meV S1 = 3×10−16 cm2 E2 = 190 mev S2 = 7×10−19 cm2 E3 = 330 meV S3 = 4×10−16 cm2 E4 = 500 meV S4 = 2×10−12 cm2 E5 = 410 mev S5 = 1×10−16 cm2 E6 = 630 meV S6 = 2×10−14 cm2 E7 = 330 meV S7 = 5×10−14 cm2