EHD-photoluminescence kinetics in doped Ge

Abstract Measurements of the LA-phonon assisted line kinetics of the EHD photoluminescence in As- and Sb-doped germanium with impurity concentrations n D = 10 15 − 10 17 cm −3 are presented. These kinetics are found to be strongly dependent on the excitation level at 4.2 K. From the experimental results and a simplified kinetic equation the EHD “diffusion length” in Ge:As sample with n D = 2 × 10 16 cm −3 is estimated to be L D ≲ 0.34 mm which is consistent with previous results.