Physics of epitaxy and c-BN films optimized growth

The cubic zinc-blende phase of boron nitride (c-BN) affords a plethora of potential applications based on material hardness, low chemical reactivity, high thermal conductivity and also on its very large band gap. A modern growth experiments are currently carried out to elaborate monocrystalline c-BN films with a strong film-substrate adherence and up to now several substrates have been used. However, although the film concentration of c-BN is increasing, the growth optimization is still a question under debate. Optimum conditions must be found in energetic growth techniques (IBAD) as well as substrate conditions (temperature, polarization). In this field basic physics is at the very heart of any strategy which aims to elaborate high quality c-BN films. This involves the physics of heteroepitaxy, an aspect of the growth process which consists in taking advantage of complementary freedom degrees as substrate choice and introduction of buffer layers to optimize heterointerfaces. Although several substrates have been tested an optimized choice still remain to be found. On the other hand, the strategy of buffer layers to improve film quality has been less investigated. In this communication, we give the state of art of this field and we discuss the problem of the optimization of c-BN film quality and we demonstrate that the variation of c-BN content in BN films grown on different substrates can be understood on the basis of elasticity theory.