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(Invited) First-Principles Studies of the Defect Formation in III-V FETs Grown by Fin Replacement Method
(Invited) First-Principles Studies of the Defect Formation in III-V FETs Grown by Fin Replacement Method
2014
Hideki Minari
Shinichi Yoshida
Ken Sawada
Masashi Nakazawa
Matty Caymax
Clement Merckling
Niamh Waldron
Weiming Guo
Sijia Jiang
Nadine Collaert
Eddy Simoen
D. Lin
Geoffrey Pourtois
Keywords:
Fin
Algorithm
Electronic engineering
Engineering
Engineering physics
replacement method
Correction
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