Old Web
English
Sign In
Acemap
>
Paper
>
Investigation of the Threshold Voltage Difference between Partially-Depleted SOI and bulk CMOS transistors
Investigation of the Threshold Voltage Difference between Partially-Depleted SOI and bulk CMOS transistors
1999
H. van Meer
J.-H. Lyu
S. Kubicek
K. De Meyer
Keywords:
Electronic engineering
Boron
Doping
Silicon on insulator
Transistor
CMOS
Materials science
Analytical chemistry
Threshold voltage
Indium
Silicon
Fabrication
Correction
Source
Cite
Save
Machine Reading By IdeaReader
4
References
0
Citations
NaN
KQI
[]