Making technology for light absorption layer of CuInSe2 semiconductor film solar cell

One kind of CuInSe 2 Preparation of semiconductor thin film layer of light-absorbing solar cells, according to CuInSe 2 stoichiometric ratio of chemical purity Cu and In tablets granules, compressed into compact , sealed in a vacuum of 1 × 10 Shi Ying tube -3 Pa's, by induction melting so as to form Cu-in alloy ingot; the Cu-in alloy ingot crushing Cu-in alloy powder, and the Se mixed powder was ball-milled for 48-96 hours to form a black precursor slurry; forming a precursor slurry is applied on the molybdenum film, a conductive glass or soda lime glass substrate with a thin layer of molybdenum metal plating, after drying precursor thin film without applying pressure, or applying a pressure of 2 ~ 20MPa densified, then heat-treated for 0.5 to 3 hours in H 2 atmosphere, the heat treatment temperature is 450 ~ 600 ℃. Advantages: ensures a strict stoichiometric ratio, easier to form a uniform layer of absorbent, and without toxic H 2 Se and Se atmosphere, a simple and practical.