Photoelectric Properties of Heterostructures with Oxide Films Containing Si(Ge) Quantum Dots Formed by Pulsed Laser Deposition

Photoelectric Properties of Heterostructures with Oxide Films Containing Si(Ge) Quantum Dots Formed by Pulsed Laser Deposition A. V. Sachenko1, D. V. Korbutyak1, Yu. V. Kryuchenko1 ∗, E. B. Kaganovich1, E. G. Manoilov1, E. V. Begun1, O. M. Sreseli2, and I. I. Geru3 1V Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv 03028, Ukraine 2Ioffe Physical-Technical Institute of the Russian Academy of Sciences, St.-Petersburg 199034, Russia 3Institute of Chemistry of the Academy of Sciences of Moldova, Chisinau, MD-2028, Moldova