The semiconductor device

A PN junction diode is formed by an N+ type buried layer having a proper impurity concentration and a P+ type buried layer. The P+ type buried layer is combined with a P+ type drawing layer to penetrate an N- type epitaxial layer and be connected to an anode electrode. An N+ type diffusion layer and a P+ type diffusion layer connected to and surrounding the N+ type diffusion layer are formed in the N- type epitaxial layer surrounded by the P+ type buried layer etc. The N+ type diffusion layer and the P+ type diffusion layer are connected to a cathode electrode. An ESD protection element is formed by the PN junction diode and a parasitic PNP bipolar transistor which uses the P+ type diffusion layer as the emitter, the N- type epitaxial layer as the base, and the P+ type drawing layer etc as the collector.