Electrical Characterization of inGaAsN/GaAs Heterostructures

This study emphasises an electrical characterization of sixteen different InGaAsNIGaAs triple quantum well heterostructures, prepared with various nitrogen and indium concentrations (nitrogen content varied in range of 0 % to 1.2 % and indium concentration from 0 % up to 16 %) by capacitance methods. Parameters of many deep energy levels were gathered and assessed by Deep Level Transient Fourier Spectroscopy measurements. Eight of these were with high probability caused by charge carrier thermal emissions from quantum wells. Authors focused their attention on conditions for prediction of the presence of the charge carrier emission from quantum wells and the one from structural defects in InGaAsNIGaAs structures with various nitrogen and indium concentrations.