Super-dense cross matrix array type magnetic random access memory manufacturing technology

The invention provides a super-dense cross matrix array type magnetic random access memory manufacturing technology comprising the steps that an insulated dielectric layer is grown on a silicon substrate; a bottom electrode layer is prepared; a magnetic memory unit layer is prepared; a first mask layer is prepared; a bottom electrode pattern is photoetched and transferred to the first hard mask; the magnetic memory unit layer and the bottom electrode layer are etched and etching stops at the dielectric layer; dielectric is deposited; surface planarization is performed; a top electrode layer is prepared; a second mask layer is prepared; a top electrode pattern is photoetched and transferred to the second hard mask; and the top electrode layer and the magnetic memory unit layer are etched and etching stops at the bottom electrode layer. The original requirement of at least using four photoetching plates and four times of photoetching technology is optimized into the requirement of using only two photoetching plates and two times of photoetching technology on the basis of the existing cross matrix array type magnetic random access memory manufacturing technology so that product investment and production cost can be greatly reduced.