Flip-chip bonding electrode structure of surface-type semiconductor laser device

The invention provides a flip-chip bonding electrode structure of a surface-type semiconductor laser device and belongs to the field of laser technology application. The flip-chip bonding electrode structure comprises a sapphire substrate, an epitaxial growth layer, an insulation layer, a P-type electrode, an N-type electrode, an N'-type electrode and a gold wire, wherein the N'-type electrode and the P-type electrode are equal in height and positioned on two sides of the N-type electrode respectively, and two ends of the gold wire are bonded on the N-type electrode and the N'-type electrode respectively. The flip-chip bonding electrode structure of the surface-type semiconductor laser device has the advantages that a traditional structure of the surface-type semiconductor laser device is changed, the height of the N-type electrode is increased to be as same as that of the P-type electrode through the gold wire, and accordingly, the problem of height difference between the P-type electrode and the N-type electrode of the sapphire laser device can be solved; in the same way, spacing between the P-type electrode and the N-type electrode can be increased properly, and bonding consumables of the P-type electrode and the N-type electrode can be isolated during bonding, so that short circuit possibly happening during bonding is prevented effectively.