Wafer level chip scale packing for si-based driver application

In this paper a wafer-level chip-scale packing (WLCSP) for si-based driver using bump technique will be presented. The WLCSP is completely fabricated using conductive redistribution layer (RDL) technology which include dielectric material polyimide (PI) and RDL metallization, then the copper bumps are electroplated on the under bumping metallization (UBM) layer. The diameter of the bump is 200um and the height of the bump is 50um. The measure results show that the performance of the driver which be packaged is excellent. The size of the package is 1.8mm*1.2mm*0.35mm.