SHRINKAGE EFFECTS OF POLYIMIDE FILM UNDER ION-BEAM IRRADIATION

Abstract Ion beam induced electrical conduction of ion implanted polyimide film could find potential applications for encapsulation of microelectronic devices and gate-transistor fabrication. One of the important problems to be solved is the shrinkage effect of polyimide film under ion beam irradiation. In this work the shrinkage effects of B + -implanted polyimide film under different implantation conditions were investigated by using different techniques (IR reflection interference spectra, surface profile measuring system, and automatic spreading resistance measurements). According to the previous results of ASR measurement a multilayer model of the implanted polyimide film was proposed for the computer simulation of infrared reflection interference spectra. The shrinkage and depth profile of the refraction index of the implanted polyimide films will be discussed.