Semiconductor device and manufacturing method, and a method for manufacturing a MEMS device

The present invention relates to a method for manufacturing a semiconductor device and a method of manufacturing the MEMS device. The method of manufacturing a semiconductor device which comprises forming a substrate to form bulk silicon movable member is formed on a first surface of the first raised structure in the movable member, wherein the first surface facing the substrate. The present invention allows the use of some high-temperature annealing process, and can reduce costs, and reduce adhesions and parasitic capacitance, very suitable for practical use.