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Semiconductor Heterostructures Based on Epitaxial Molybdenum Disul fi de and Gallium Nitride
Semiconductor Heterostructures Based on Epitaxial Molybdenum Disul fi de and Gallium Nitride
2016
Dmitry Ruzmetov
Kehao Zhang
Gheorghe Stan
Berc Kalanyan
Ganesh R. Bhimanapati
Sarah M. Eichfeld
Robert A. Burke
P. B. Shah
O TerranceP.
K. Regan
Frank J. Crowne
Anthony Birdwell
Joshua J. Robinson
Albert V. Davydov
Tony Ivanov
Keywords:
Heterojunction
Molybdenum
Gallium nitride
Optoelectronics
Epitaxy
Materials science
Semiconductor
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