In-situ recovery of on-membrane PD-SOI MOSFET from TID defects after gamma irradiation

This paper demonstrates a procedure for total insitu recovery of on-membrane n-type MOSFET from Total Ionizing Dose (TID) defects, due to the exposure to gamma radiation. After a total dose of 348 krad (Si), several annealing steps were applied using an integrated micro-heater with a maximum temperature of 364 °C. The electrical characteristics of the transistor are recorded initially in normal conditions, after irradiation and then after each step of the thermal annealing. The electro-thermal annealing of the transistor allowed a total recovery of the original characteristics after a major shift due to radiation-induced defects. Power Spectral Density (PSD) of noise measurements showed a clear domination of the Random Telegraph Noise (RTN) behavior due to the creation of oxide defects after irradiation. After annealing, the RTN behavior vanishes with a further important decrease of flicker noise. Low-frequency noise measurements of the transistor confirmed the neutralization of oxide defects after annealing.