Mg Doped p-Cladding AlInP Layer with Window-strucure High Power 660 nm(3.7 W) AlGaInP Broad Area Laser Diodes

High performance Mg doped p-cladding layer compressive strain separated confinement double quantum wells AlGaInP/GaInP laser diodes were fabricated by low-pressure metal-organic chemical vapor deposition technology.Window-structure fabricated on two end faces by selective Zn diffusion is adopted,which is useful for avoiding catastrophic optical mirror damage.High power output is realized in such laser with window structure.The mesa width and the cavity length for a laser diode are 150 μm and 1000 μm respectively.Under a continuous-wave operation at room temperature of 25 ℃,the maximum output power of the laser diode with window structure reaches 3.7 W,which is 4.4 times higher than the ordinary value of 0.83 W.A high characteristic temperature of 68 K and a low thermal resistance of 4.6 K/W were obtained.Reliable operation of 1000 h at a constant power 500 mW and 20 ℃(Cu heat sink)were shown.