Effectiveness of device parameters with regard to the electrical characteristics of the MOSFET double gate

Abstract The diminishment of metal-oxide semiconductor field-effect transistors (MOSFETs) is the sole reason to which made fabrication and integration of very large scale integrated circuits (VLSI) possible. The drastically reducing dimensions led a way to the devices with high density chips. Beside the advantages allied with the shortening of devices, it also has specific limitations usually identified as short-channel effects. The features move away from their expected values because of these effects. In order to minimize these deviations many techniques are introduced. These days a Multi-Gate (MG) transistor in VLSI is one of the encouraging and promising techniques. One of the MG transistors mostly used is Double-Gate (DG) transistor. Substrate is surrounded by gates from its either sides in DG MOSFET. So that, the gate terminal has more control over the electrons travelling in the channel. In the present work, investigation will be done on the effect of alteration of several device parameters on the DG MOSFET’s electrical characteristics. From the results, one can recognize the impact of change in the measurements and/or property of material on the electrical properties. To determine the maximum current related to those measurements of DG MOSFETs, these results will be very beneficial.