Silicon doped with gallium photoconductors: effect of uniaxial stress

Silicon doped with gallium photoconductors have been studied under strong uniaxial stress up to 0.6 GPa for the purpose of extending the spectral response towards longer wavelengths. The stress dependence of the spectral responsivity has been measured by Fourier Transform Spectroscopy measurements. In addition unstressed SiGa photoconductors have been optimized for a balloonborne experiment named AROME.