Pholuminuksence Studies on Porous Silioon Quantum Confinement Mechanism

A novel step—like and pinning behavior of photoluminescence peak energy connected with changes in the concentration of HF and current density were for the first time observed for p— type porous silicon. Based on a theoretical calculation of the electron structure of the silicon quantum wire it is argued that these behaviors can be explained in terms of a novel formation mechanism model of porous silicon.