Epitaxially Grown Monoisotopic Si, Ge, and Si1–xGex Alloy Layers: Production and Some Properties

The technology of the growth of Si, Ge, and Si1–x Ge x layers by molecular-beam epitaxy with the use of a sublimation source of monoisotopic 30Si or 28Si and/or gas sources of monogermane 74GeH4 is demonstrated. All of the epitaxial layers are of high crystal quality. The secondary-ion mass spectroscopy data and Raman data suggest the high isotopic purity and structural perfection of the 30Si, 28Si, 74Ge, and 30Si1–x 74Ge x layers. The 30Si layers doped with Er exhibit an efficient photoluminescence signal.