Automated Measurement of the Bias Dependence of Low Frequency Small-signal Parameter Dispersions in GaAs MESFETs
1989
An automated system has been developed which measures the small-signal g m and g o of FET's over a wide bias and frequency range. This behaviour has been investigated in GaAs MESFET's and several distinct mechanisms have been observed. Backgating has also been measured and related to the g m dispersions of the same device.
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