Automated Measurement of the Bias Dependence of Low Frequency Small-signal Parameter Dispersions in GaAs MESFETs

An automated system has been developed which measures the small-signal g m and g o of FET's over a wide bias and frequency range. This behaviour has been investigated in GaAs MESFET's and several distinct mechanisms have been observed. Backgating has also been measured and related to the g m dispersions of the same device.