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Surface kinetic considerations for molecular-beam epitaxy growth of high-quality inverted heterointerfaces
Surface kinetic considerations for molecular-beam epitaxy growth of high-quality inverted heterointerfaces
1988
Peter G. Newman
D.D. Smith
N. M. Cho
D. J. Kim
Anupam Madhukar
Keywords:
Chemical physics
Molecular beam epitaxy
Liquid nitrogen
Materials science
Solid-state physics
Electron diffraction
Kinetic energy
Heterojunction
Correction
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