High-frequency performance of lateral p-n junction photodiodes

We developed an analytical device model for quantum well lateral p-n junction photodiodes (LJPDs). The model takes into account the features of the carrier transport in LJPDs and their geometry, which ensure short transit times and a low capacitance. This model is used for calculating the LJPD's characteristics as functions of the signal frequency, bias voltage, and structural parameters and for the estimation of the LJPD ultimate performance.