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A computational analysis on the role of low energy proton-induced single event upset in a 65 nm CMOS SRAM
A computational analysis on the role of low energy proton-induced single event upset in a 65 nm CMOS SRAM
2020
M. Soleimaninia
G R Raisali
A. Moslehi
Keywords:
CMOS
Static random-access memory
Single event upset
Optoelectronics
Proton
computational analysis
low energy
Materials science
Correction
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