Characterization and modeling of bias-stressed InGaP/GaAs collector-up tunneling-collector HBTs fabricated with boron-ion implantation

To characterize and model the degradation of collector-up (C-up) heterojunction bipolar transistors (HBTs), we bias stress InGaP/GaAs C-up tunneling-collector HBTs (TC-HBTs) fabricated under various conditions for etching the collector mesas and of implanting boron ions into the extrinsic emitter. Contrary to the previous reports on reduction in collector current I/sub C/ of bias-stressed emitter-up HBTs fabricated with ion implantation, no I/sub C/ Gummel shift is observed in the case of C-up TC-HBTs, probably due to the lower damage resulting from the lower ion dosage. On the other hand, the base current of the bias-stressed C-up TC-HBTs increases with the decrease of the ion dose and with the increase of the collector mesa undercut under the collector electrode that is also used as an implant mask. We attribute the increased base current to the increased carrier recombination at the extrinsic base surface. Making the area of the emitter-base junction smaller than that of the base-collector junction-using electron-cyclotron resonance plasma etching together with lateral spreading of heavily implanted boron ions-results in a stable current gain even after a 1030-h testing at a junction temperature of 210/spl deg/C and a collector current density of 40/sup 2/kA/cm.