Numerical analysis on the effects of bandgap energy and polarization of electron blocking layer in near-ultraviolet light-emitting diodes

The influences of bandgap energy and polarization of the electron blocking layer (EBL) in near-ultraviolet light-emitting diodes (NUV LEDs) are systematically investigated. Design curves for the output power of NUV LEDs as a function of bandgap energy and polarization of EBL are provided. The simulation results show that, when the bandgap of the EBL increases, the polarization and polarization-induced charge increase accordingly. Both mechanisms have opposite effects for the EBL in confining electrons. The NUV LEDs with an EBL of large bandgap or small polarization have improved performance due to the enhanced efficiency of electron confining and hole injection.