Sb on Si(111) studied by branching-ratio photoelectron holography

Abstract Branching-ratio photoelectron holography has been employed to study the structure of Sb adsorbed on Si(111). The Sb 4d corelevel emission was measured as a function of emission direction, and the branching ratio between the two spin-orbit-split components was determined. The data were holographically transformed to yield an image for the atomic distributions near the Sb emitter. The results are consistent with a trimer model.