The growth of ZnSe by photo-assisted metalorganic chemical vapor deposition (MOCVD)

Abstract ZnSe epitaxy layers were grown on (1 0 0)GaAs substrates by photo-assisted MOCVD using DMZn and DMSe as group II and VI sources, respectively. Irradiation can improve the growth rate efficiently, but the irradiation intensity influences the growth rate and the crystalline quality negligibly in a large range. Due to an oxidation reaction on the surface of ZnSe, the growth rate and the flow ratio of group II and VI sources influence the crystalline quality.