Multiwavelength Raman analysis of SiOx and N containing amorphous diamond like carbon films

Abstract In the current research SiO x and N containing amorphous diamond like carbon (a-C:H) films were deposited on crystalline silicon from hexamethyldisiloxane and hexamethyldisilazane compounds respectively, using closed drift ion beam source and different ion beam energy in a range 300–800 eV. Hydrogen was used as a carrier gas of the precursors. Composition of the films was studied by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The structure of these films was studied employing multiwavelength (325 nm–785 nm) Raman analysis. From the Raman spectra analysis, the characteristic parameters such as the position of G peak, D/G peak intensity ratio as well as dispersion of G (Disp(G)) peak showing topological disorder of sp 2 phase in doped a-C:H films were determined. Analysis of Disp (G) and D/G intensity ratio revealed that in both types of films increase of ion beam energy gives higher sp 3 /sp 2 ratio in the films.