The method for manufacturing a semiconductor device, module, electronic devices and semiconductor device

Providing a transistor obtained by suppressing oxidation of the conductor. A first insulator on a substrate, an oxide semiconductor on the first insulator, the oxide and the first conductor and the second conductor on the semiconductor, the second on the first conductor an insulator, a third insulator on the second conductor, the second insulator, a third insulator and the oxide fourth on a semiconductor insulator, first on the fourth insulator 5 of the insulator, and a third conductor on the fifth insulator includes a second insulator, aluminum, have any one or more of gallium or hafnium, third insulator is aluminum, a semiconductor device having any one or more of gallium or hafnium.