Towards Faster InP Photonic Crystal All-Optical-Gates
2015
We demonstrated a two-fold acceleration of the fast time constant characterising the recovery of a P-doped Indium-Phosphide Photonic Crystal all-optical gate. Time-resolved spectral analysis is compared with a three-dimensional drift-diffusion model for the carrier dynamics, demonstrating the transition from the ambipolar to the faster minority carrier dominated diffusion regime. This open the perspective for faster yet efficient nanophotonic all-optical gates.
- Correction
- Cite
- Save
- Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI