Fabrication of a high sensitivity and fast response self-powered photosensor based on a core-shell silicon nanowire homojunction

Core-shell self-powered SiNWs homojunction photosensors have been fabricated. SiNWs are prepared by a metal assisted chemical etching method using different HF/H2O2 ratios and etching times. The length of the p-SiNWs increased as the H2O2 concentration and etching time increased. All the grown SiNWs show very low (∼0.7%) optical reflectance for the wavelength range of 200–1100 nm. Photoluminescence spectra of all prepared SiNWs show sharp and broad emission bands located in the red region of the light spectrum. Core-shell homojunction photosensors were fabricated by spin coating P2O2 onto the surface of the prepared p-SiNWs and annealed at 900 °C for 1 h. The fabricated devices exhibited photovoltaic behavior and high photosensitivity with fast response speed to the visible light. However, the sample that was fabricated using HF/H2O2 ratio of 1:1 showed the highest photosensitivity value of 3578% while the photosensor prepared using 2:1 ratio of HF/H2O2 gave the faster rise and decay time.