Charge Transfer in Gap Structures Based on the Chalcogenide System (As2Se3)100 –xBix

The results of investigating charge-transfer processes in thin layers of a vitreous system (As2Se3)100 – xBix are presented. A power-law dependence of the conductivity on the frequency and a decrease in the exponent s with increasing temperature are found. Charge transfer is a thermally activated process with two regions in the temperature dependence of the conductivity with the activation energies E1 = 0.12 ± 0.01 eV and E2 = 0.23 ± 0.01 eV, respectively. The results are explained in terms of the correlated barrier hopping (CBH) model of hopping conductivity in disordered systems. The main microparameters of the system are calculated: the density of localized states (N), the hopping length (Rω), and the largest height of the potential barrier (WM).