A high injection resonant cavity violet light emitting diode incorporating (Al, Ga)N distributed bragg reflector

A vertical cavity violet LED has been designed and implemented which includes an optical resonator composed of an in-situ grown GaN/AlGaN DBR and a high reflectivity dielectric mirror. The structure incorporates an intracavity lateral current spreading layer based on a p ++ /n ++ InGaN/GaN tunnel junction. Electroluminescence shows directional emission, with modal line-widths as narrow as 0.6 nm.