High-quality SiGe films grown with compositionally graded buffer layers for solar cell applications

Abstract In this study, we fabricated strain-relaxed Si 0.58 Ge 0.42 thin films on Si substrates by molecular beam epitaxy (MBE) for heterojunction solar cell applications. A combined set of stepwise Si 1− x Ge x buffer layers and a Si 0.51 Ge 0.49 strain-inverted layer, in conjunction with rapid thermal annealing (RTA), were employed to confine the dislocations within the buffer layers. Structural characterization of the samples revealed a low dislocation density of less than 10 5  cm −2 and a relatively smooth surface (0.903 nm in root mean square roughness). The results of solar cell characterization showed both an extended absorption edge (1200 nm) and improved diode characteristics. For these cells, the short-circuit current density, open-circuit voltage, fill factor, and efficiency were 8.25 mA cm −2 , 233 mV, 0.509, and 0.98%, respectively.