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Threshold Voltage Increasing Induced by Poly Silicon Gate Counter Pre-Doping in NMOSFET
Threshold Voltage Increasing Induced by Poly Silicon Gate Counter Pre-Doping in NMOSFET
2010
Jinhua Liu
Allan Zhou
K. Zheng
Jimmy Wu
Z.-H. Gan
Shuaigong Chen
Huachun Guo
Guiming Wang
Jianhua Ju
H. M. Ho
Jay Ning
I C Chen
Keywords:
Doping
Threshold voltage
Electronic engineering
Silicon
Materials science
Optoelectronics
Correction
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