Crystal structure analysis of epitaxial silicon films formed by a low kinetic energy particle process

Formation of high quality epitaxial silicon films at 350 °C by a low kinetic energy particle process has been verified by a series of crystal structure analyses performed on these films. It was found that the crystallinity of a grown film is drastically changed by the energy of Ar ions concurrently bombarding the growing silicon film surface. The epitaxially grown film with an optimum ion bombardment energy is defect‐free both at the interface and in the bulk of the film as revealed by high‐resolution transmission electron microscopy.