A diode device combining lateral field-effect transport and vertical tunneling in a multi-quantum-well heterostructure

The authors discuss an electronic device with asymmetric contacts to a InGaAs-InP multilayer heterostructure. Current enters via an alloyed ohmic contact into the quantum wells (QWs) and flows laterally along capacitively coupled channels. It leaves via tunneling between the layers and through a forward-biased surface Schottky contact. A step-like I-V dependence is observed and interpreted by a model calculation. >