이종접합 (HIT) 태양전지용 TCO 로 응용 가능한 BZO(ZnO:B) 박막 연구

BZO (ZnO:B) thin films were grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) using diethylzinc (DEZ), and H2O as reactant gases and diborane (B2H6) as an n-type dopant gas. Boron and hydrogen were used as a co-dopant and post treatment using hydrogen plasma was performed in oder to boost the effect of co-doping. The structural and electrical of BZO thin films at different H₂ O/DEZ ratio were investigated. At the optimized conditions, low resistivity (1.69?10-3 Ω㎝) and sheet resistance (58 Ω/□) were obtained for the thickness of ～300 ㎚ BZO thin films deposited on glass substrate at the temperature of 453 K and processing pressure of 0.5 Torr. With the application of BZO thin films as transparent conductive oxide (TCO) in hetero-junction intrinsic thin layer (HIT) solar cell, the conversion efficiency was comparable to or higher than the commercialized ITO thin films.